DocumentCode :
2480751
Title :
Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs
Author :
Reshchikov, M.A. ; Gutkin, A.A. ; Sedov, V.E.
Author_Institution :
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
fYear :
1996
fDate :
29 Apr-3 May 1996
Firstpage :
295
Lastpage :
298
Abstract :
We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy VAsVGa. An alignment of the Jahn-Teller distortions has been found for these complexes
Keywords :
III-V semiconductors; Jahn-Teller effect; defect states; gallium arsenide; impurity states; photoluminescence; piezo-optical effects; silicon; sulphur; tellurium; tin; vacancies (crystal); 0.95 eV; GaAs:S; GaAs:Si; GaAs:Sn; GaAs:Te; Jahn-Teller distortions; complex; divacancy; n-type GaAs; photoluminescence band; photoluminescence centers; shallow donor; stress dependences; structure; Crystallization; Gallium arsenide; Optical polarization; Photoluminescence; Silicon carbide; Stress; Tellurium; Temperature dependence; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
Type :
conf
DOI :
10.1109/SIM.1996.571103
Filename :
571103
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2480751
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