• DocumentCode
    2480751
  • Title

    Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs

  • Author

    Reshchikov, M.A. ; Gutkin, A.A. ; Sedov, V.E.

  • Author_Institution
    Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
  • fYear
    1996
  • fDate
    29 Apr-3 May 1996
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy VAsVGa. An alignment of the Jahn-Teller distortions has been found for these complexes
  • Keywords
    III-V semiconductors; Jahn-Teller effect; defect states; gallium arsenide; impurity states; photoluminescence; piezo-optical effects; silicon; sulphur; tellurium; tin; vacancies (crystal); 0.95 eV; GaAs:S; GaAs:Si; GaAs:Sn; GaAs:Te; Jahn-Teller distortions; complex; divacancy; n-type GaAs; photoluminescence band; photoluminescence centers; shallow donor; stress dependences; structure; Crystallization; Gallium arsenide; Optical polarization; Photoluminescence; Silicon carbide; Stress; Tellurium; Temperature dependence; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
  • Conference_Location
    Toulouse
  • Print_ISBN
    0-7803-3179-6
  • Type

    conf

  • DOI
    10.1109/SIM.1996.571103
  • Filename
    571103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2480751