Title :
Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs
Author :
Shiraki, Hiroyuki ; Tokuda, Yutaka ; Sassa, Koichi
Author_Institution :
Adv. Technol. Res. Labs., Mitsubishi Mater. Corp., Saitama, Japan
fDate :
29 Apr-3 May 1996
Abstract :
The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors
Keywords :
III-V semiconductors; capacitance; deep levels; electron traps; gallium arsenide; impurity states; CCVTS peak heights; EL5; EL6; GaAs; anomalous filling time dependence; bistable medium-deep center; bistable reaction model; electron capture kinetics; electron emission kinetics; electron occupation fractions; isothermal constant-capacitance voltage transient spectroscopy; long range filling pulse duration; n-type bulk GaAs; rate equations; trap components; Capacitance measurement; Charge carrier processes; Electron emission; Electron traps; Filling; Gallium arsenide; Isothermal processes; Kinetic theory; Pulse measurements; Voltage;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571104
