Thermoelectric properties of Re-Si nanocrystalline composites

Author

Burkov, A.T. ; Heinrich, A. ; Nakama, T. ; Pitschke, W. ; Schumann, J. ; Yagasaki, K.

Author_Institution

Dept. of Phys., Ryukyus Univ., Okinawa, Japan

fYear

1998

fDate

24-28 May 1998

Firstpage

231

Lastpage

236

Abstract

In this report the results on the phase formation and transport properties of amorphous and nanocrystalline Re-Si thin film composites are presented. We use the composites as a model material to investigate the effect of a reduced grain size and inter-grain interfaces on the thermoelectric properties. We found that, both, the phase composition and the crystalline grain size appear to be important parameters for thermoelectric material optimisation. The results suggest that the thermoelectric parameters of a nanocrystalline composite can be superior to those of the conventional poly- or single-crystalline material of the same composition

Keywords

amorphous state; annealing; composite materials; grain size; nanostructured materials; rhenium; silicon; sputtered coatings; thermoelectricity; thin films; Re-Si; amorphous composites; grain size; inter-grain interfaces; nanocrystalline composites; phase composition; phase formation; thermoelectric properties; thin film; Amorphous materials; Composite materials; Conducting materials; Crystalline materials; Crystallization; Failure analysis; Grain size; Semiconductor films; Solid state circuits; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on

Conference_Location

Nagoya

ISSN

1094-2734

Print_ISBN

0-7803-4907-5

Type

conf

DOI

10.1109/ICT.1998.740359

Filename

740359