Title :
Thermoelectric properties of bismuth films
Author :
Grabov, V.M. ; Komarov, V.A. ; Uryupin, O.N.
Author_Institution :
Herzen Russian State Pedagogical Univ., St. Petersburg, Russia
Abstract :
Thin bismuth polycrystalline and single crystal film transport coefficients are measured in the temperature range 80-300 K. The distinction between polycrystalline and single crystal films and bulk bismuth single crystal transport coefficients is established. The physical mechanism of the film transport peculiarity is discussed
Keywords :
Hall effect; bismuth; magnetoresistance; semimetallic thin films; thermoelectric power; 80 to 300 K; Bi; Hall coefficient; magnetoresistance; polycrystalline films; single crystal films; thermoelectric properties; thermopower; thin films; transport coefficients; Bismuth; Crystallization; Electric resistance; Magnetic field measurement; Magnetic films; Magnetoresistance; Substrates; Temperature dependence; Temperature distribution; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740361
