DocumentCode :
2481040
Title :
Electroconductivity of profiled crystals based on Bi2Te 3 grown by direct crystallization in molding die with thin cavity
Author :
Belov, I.M. ; Volkov, M.P. ; Manyakin, S.M.
Author_Institution :
Crystal Co. Ltd., Moscow, Russia
fYear :
1998
fDate :
24-28 May 1998
Firstpage :
247
Lastpage :
248
Abstract :
Profiled crystals based on Bi2Te3 in the form of flat plates were grown by direct crystallization in molding die with thin cavity. Some results of electroconductivity measurements on n- and p-type samples are presented. The melt compositions are found which ensure the most uniform electroconductivity profiles along the length of ingots
Keywords :
bismuth compounds; crystal growth from melt; crystallisation; electrical conductivity; moulding; semiconductor growth; semiconductor materials; Bi2Te3; direct crystallization; electroconductivity; flat plates; ingots; melt compositions; molding die; n-type samples; p-type samples; profiled crystals; thin cavity; Bismuth; Charge carrier processes; Conducting materials; Conductivity; Crystalline materials; Crystallization; Equations; Probes; Tellurium; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
ISSN :
1094-2734
Print_ISBN :
0-7803-4907-5
Type :
conf
DOI :
10.1109/ICT.1998.740363
Filename :
740363
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2481040
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