DocumentCode :
2481331
Title :
OMCVD growth for optoelectronics
Author :
Bhat, R.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fYear :
1993
fDate :
15-18 Nov 1993
Firstpage :
421
Lastpage :
422
Abstract :
The epitaxial deposition by organometallic chemical vapor deposition (OMCVD) technique has advanced significantly, with the demonstration of excellent composition and thickness control down to the monolayer scale in the growth direction. As a result a variety of III-V materials systems have been used. In this talk, however, we will concentrate on some of the applications of OMCVD to advance the state-of-the-art of optoelectronics needed in the telecommunication industry
Keywords :
chemical vapour deposition; epitaxial growth; integrated optoelectronics; optical communication equipment; optical fabrication; optoelectronic devices; III-V materials systems; OMCVD growth; composition; epitaxial deposition; growth direction; monolayer scale; optoelectronics; organometallic chemical vapor deposition; telecommunication industry; thickness control; Distributed feedback devices; Epitaxial growth; Indium phosphide; Laser feedback; Light emitting diodes; Optical arrays; Optical materials; Optical waveguides; Photonic band gap; Quantum well lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
Type :
conf
DOI :
10.1109/LEOS.1993.379239
Filename :
379239
Link To Document :
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