DocumentCode
2481331
Title
OMCVD growth for optoelectronics
Author
Bhat, R.
Author_Institution
Bellcore, Red Bank, NJ, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
421
Lastpage
422
Abstract
The epitaxial deposition by organometallic chemical vapor deposition (OMCVD) technique has advanced significantly, with the demonstration of excellent composition and thickness control down to the monolayer scale in the growth direction. As a result a variety of III-V materials systems have been used. In this talk, however, we will concentrate on some of the applications of OMCVD to advance the state-of-the-art of optoelectronics needed in the telecommunication industry
Keywords
chemical vapour deposition; epitaxial growth; integrated optoelectronics; optical communication equipment; optical fabrication; optoelectronic devices; III-V materials systems; OMCVD growth; composition; epitaxial deposition; growth direction; monolayer scale; optoelectronics; organometallic chemical vapor deposition; telecommunication industry; thickness control; Distributed feedback devices; Epitaxial growth; Indium phosphide; Laser feedback; Light emitting diodes; Optical arrays; Optical materials; Optical waveguides; Photonic band gap; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379239
Filename
379239
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