Title :
Optoelectronic VLSI circuit fabrication
Author :
Shenoy, K.V. ; Nuytkens, P.R. ; Fonstad, C.G., Jr. ; Johnson, G.D. ; Goodhue, W.D. ; Donnelly, J.P.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
We demonstrate for the first time key components of a fabrication sequence for immediately manufacturing monolithic optoelectronic very large scale integration (OE-VLSI) circuits and systems. An OE transceiver (generic smart pixel) was designed, regrown, and is nearing completion to demonstrate the high-density integration of LEDs, ridge lasers, and in-plane surface emitting lasers (IPSELs) with state-of-the-art VLSI GaAs MESFET transceiver designs
Keywords :
III-V semiconductors; MESFET integrated circuits; VLSI; gallium arsenide; integrated optoelectronics; optical fabrication; smart pixels; transceivers; GaAs; GaAs MESFET transceiver; LEDs; OE-VLSI circuits; fabrication; high-density integration; in-plane surface emitting lasers; monolithic optoelectronic very large scale integration circuits; ridge lasers; smart pixel; Circuits and systems; Gallium arsenide; Integrated circuit manufacture; Light emitting diodes; Optical design; Optical device fabrication; Smart pixels; Surface emitting lasers; Transceivers; Very large scale integration;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379245
