Title :
Liquid phase diffusion bonding and thermoelectric properties of Pb 1-xSnxTe compounds
Author :
Hashimoto, M. ; Shiota, I. ; Ohashi, Osamu ; Isoda, Y. ; Imai, Y. ; Shinohara, Y. ; Nishida, I.A.
Abstract :
The solidified Pb1-xSnxTe compounds with different x were joined by liquid phase diffusion bonding technique in order to prepare the segmented thermoelectric materials which had a fundamental FGM (functionally graded materials) structure. The Pb1-xSnxTe compound is a p-type semiconductor whose carrier concentration increases with increasing x. Therefore the maximum thermoelectric figure of merit of Pb1-xSnxTe shifted to a higher temperature with increasing x. A Sn sheet of 50 μm thick was inserted between Pb1-xSnxTe compounds as soldering material, and the joining was performed under 2.0 MPa at 700 K for 1800 s in Ar atmosphere. SEM observation revealed that the soldering material reacted with Pb1-xSnxTe to form a Sn-rich alloyed layer of less than 2 μm in thickness. No remarkable increase in resistivity was observed in the vicinity of the interface. The joined material showed higher maximum power, Pmax, than monolithic materials
Keywords :
IV-VI semiconductors; bonds (chemical); carrier density; lead compounds; thermoelectric power; tin compounds; (PbSn)Te; 1800 s; 2 mum; 2.0 MPa; 50 mum; 700 K; Pb1-xSnxTe; SEM; carrier concentration; liquid phase diffusion bonding; maximum thermoelectric figure of merit; p-type semiconductor; segmented thermoelectric materials; thermoelectric properties; Argon; Diffusion bonding; Joining materials; Semiconductor materials; Sheet materials; Soldering; Tellurium; Temperature; Thermoelectricity; Tin;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740391