Electrical and optical properties of non-uniform semiconducting synthetic diamond with deep impurity levels

Author

Vorobiev, Yuri V. ; Zakharchenko, Roman V. ; Semenova, Galina N. ; Svitelskiy, Alexey V. ; Torchinskaya, Tatyana V.

Author_Institution

Kyiv Polytech. Inst., Ukraine

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

307

Lastpage

310

Abstract

Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is 0.4 eV at low electric field and 0.3 eV at high field. The change of activation energy is explained on the basis of the hydrogen-like model of the boron acceptor center. In high electric field the electric current instability is observed connected with the deep levels recharging and thermal breakdown phenomena

Keywords

boron; deep levels; diamond; electric breakdown; elemental semiconductors; high field effects; impurity states; light transmission; photoconductivity; C:B; activation energy; boron acceptor center; bulk high-ohmic region; deep impurity levels; deep level recharging; electric current instability; electrical properties; high electric field; hydrogen-like model; low electric field; low-resistance surface layer; nonuniform semiconducting synthetic diamond; optical properties; photoconductivity; synthetic boron-doped p-type single crystals; thermal breakdown phenomena; Absorption; Boron; Conductivity; Electrical resistance measurement; Luminescence; Optical surface waves; Photoconductivity; Semiconductivity; Semiconductor impurities; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571107

Filename

571107