Photocurrent and electroreflectance measurements of MOVPE grown InGaP/InAlGaP multiple quantum wells for optoelectronic applications in the visible wavelength range

Author

Blum, O. ; Fritz, I.J. ; Schneider, R.P., Jr. ; Howard, A.J.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

450

Lastpage

451

Abstract

Recently, great advances have been achieved in visible-light emitting lasers utilizing GaInP/AlGaInP multiple quantum wells (MQWs), however other optoelectronic devices, such as modulators, have not received as much attention. To design and fabricate such structures, a better understanding of this material system is needed. In this paper we characterize nominally unstrained InGaP/InAlGaP MQWs grown in a horizontal quartz metalorganic vapor-phase epitaxial (MOVPE) reaction chamber

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroreflectance; gallium compounds; indium compounds; integrated optics; optical fabrication; photoconducting materials; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; GaInP-InAlGaP; InGaP/InAlGaP multiple quantum wells; MOVPE; MOVPE grown; electroreflectance measurements; horizontal quartz metalorganic vapor-phase epitaxial reaction chamber; material system; optical modulators; optoelectronic applications; optoelectronic devices; photocurrent measurements; unstrained InGaP/InAlGaP MQWs; visible wavelength range; Absorption; Breakdown voltage; Epitaxial growth; Epitaxial layers; Gallium arsenide; P-i-n diodes; Photoconductivity; Quantum well devices; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379254

Filename

379254