Parallel optical interconnect using surface emitting laser and photodiode arrays

Author

Vakhshoori, Daryoosh

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

462

Lastpage

463

Abstract

Vertical cavity surface emitting lasers (VC-SELs) have been studied for several years and matured to the point that lend itself to some practical system applications. The advantage of VC-SELs over their conventional edge emitting counterpart comes from their unique topology which allows their two dimensional array fabrication and testing without cleaving of the semiconductor material. The 2-D integration is also made possible by the VG-SELs low threshold current with less than 20mW electrical power dissipation. The 8x18 array of VC-SELs is shown

Keywords

optical communication equipment; optical interconnections; parallel architectures; photodiodes; semiconductor laser arrays; semiconductor lasers; surface emitting lasers; 2-D integration; 20 mW; VC-SELs; electrical power dissipation; low threshold current; parallel optical interconnect; photodiode arrays; semiconductor material; surface emitting laser; system applications; topology; two dimensional array fabrication; vertical cavity surface emitting lasers; Materials testing; Optical device fabrication; Optical interconnections; Semiconductor device testing; Semiconductor laser arrays; Semiconductor materials; Surface emitting lasers; Threshold current; Topology; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379260

Filename

379260