Title :
Doping of FeSi2 by intermixed additives sintering
Author :
Schackenberg, K. ; Arenz, F. ; Müller, E. ; Ernst, H. ; Schilz, J. ; Kaysser, W.A.
Author_Institution :
Inst. of Mater. Res., German Aerosp. Center, Koln, Germany
Abstract :
A simple powder metallurgical instrumentality for the preparation of doped FeSi2 bulk material from undoped FeSi2 and elemental dopants has been developed and tested. The processing parameters have been optimised with respect to an advantageous thermoelectric performance. The thermoelectric transport properties (Seebeck coefficient, electrical conductivity, thermal conductivity, charge carrier density and mobility) have been determined for p-type FeSi2:Al and FeSi2:Al+Mn, respectively. The results have been compared to uniaxial hot pressed material from gas atomised pre-alloyed FeSi2:Al
Keywords :
Seebeck effect; aluminium; carrier density; carrier mobility; iron compounds; manganese; powder technology; semiconductor doping; semiconductor materials; sintering; thermal conductivity; FeSi2:Al; FeSi2:Al,Mn; Seebeck coefficient; carrier density; carrier mobility; electrical conductivity; intermixed additives sintering; powder metallurgy; thermal conductivity; thermoelectric performance; Additives; Business process re-engineering; Composite materials; Doping; Grain size; Iron; Microstructure; Milling; Powders; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-4907-5
DOI :
10.1109/ICT.1998.740399
