• DocumentCode
    2481709
  • Title

    P5I-4 Diamond Saw Resonators With SiO2/ZnO/IDT/ZnO/Diamond Structure

  • Author

    Fujii, Satoshi ; Kawano, Shuichi ; Umeda, Takatoshi

  • Author_Institution
    Seiko Epson Corp., Nagano
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    2367
  • Lastpage
    2370
  • Abstract
    Diamond surface acoustic wave (SAW) resonators based on a SiO2/ZnO/diamond structure have been successfully developed to operate at a high frequency (ranging in GHz) and with good temperature stability. According to Lesson´s model, in order to obtain low phase noise the resonators in the oscillator circuit should have high power durability. This paper describes the improved power durability attained by diamond SAW resonators with an improved structure. The improved structure was achieved by adding one thin layer of ZnO film between the SiO2 and IDT layers of the conventional structure. It was found that the resonator with the improved structure was capable of handling 20 more dB of input power than the conventional structure handles. Structural calculations performed using the finite element method (FEM) confirmed a dramatic improvement in durability without significant changes in characteristics compared to the conventional structure, which does not have a layer of ZnO over the IDT.
  • Keywords
    II-VI semiconductors; diamond; finite element analysis; interdigital transducers; semiconductor thin films; silicon compounds; surface acoustic wave resonators; surface acoustic wave transducers; thin film devices; zinc compounds; FEM; IDT layers; SiO2-ZnO-C; diamond SAW resonators; finite element method; interdigital transducers; oscillator circuit; phase noise; power durability; Circuits; Frequency; Optical films; Oscillators; Phase noise; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2007. IEEE
  • Conference_Location
    New York, NY
  • ISSN
    1051-0117
  • Print_ISBN
    978-1-4244-1384-3
  • Electronic_ISBN
    1051-0117
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2007.595
  • Filename
    4410168