DocumentCode :
2481725
Title :
Thermoelectric properties of Co-doped n-type iron silicides prepared by mechanical alloying
Author :
Min, Byoung-Gue ; Shim, Jae-Dong ; Lee, Dong-Hi
Author_Institution :
Sch. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
fYear :
1998
fDate :
24-28 May 1998
Firstpage :
386
Lastpage :
389
Abstract :
N-type thermoelectrics of Co-doped iron silicide have been fabricated and studied. The Fe:Co ratio was kept constant at 0.95:0.05 to achieve a composition of (Fe0.95Co0.05)x Si2, where two values of x were chosen: 0.9 and 0.8 to observe the dispersion effect of the Si phase. For these, the mechanical alloying method for powdering and the pressure-resistance-sintering were employed. The sintering temperature, inherently controlling the size of dispersed Si phases, was varied from 760 to 880°C. The sintered specimens of the present process showed a similar Seebeck coefficient (a≈183 μV/K) compared to the ordinary ingot powdering method. The electrical and thermal conductivities, however, decreased with the reduction in interspacing of Si phases. The figure of merit was increased to Z=1.0×10-4/K, which was believed to be enhanced by the phonon scattering effect of the dispersed Si phases
Keywords :
Seebeck effect; cobalt; electron-phonon interactions; iron compounds; mechanical alloying; sintering; thermal conductivity; 760 to 880 degC; Co-doped n-type iron silicides; Fe0.95Co0.05Si2; FeSi2:Co; Seebeck coefficient; dispersed Si phases; figure of merit; mechanical alloying; phonon scattering; pressure-resistance-sintering; sintering temperature; thermal conductivity; thermoelectrics; Alloying; Dispersion; Iron; Phonons; Scattering; Silicides; Size control; Temperature control; Thermal conductivity; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on
Conference_Location :
Nagoya
ISSN :
1094-2734
Print_ISBN :
0-7803-4907-5
Type :
conf
DOI :
10.1109/ICT.1998.740400
Filename :
740400
Link To Document :
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