DocumentCode :
2481824
Title :
P5K-1 High Temperature Broadband Contact BAW Transducer
Author :
Parks, David A. ; Tittmann, Bernhard R.
Author_Institution :
Perm State Univ., Perm
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
2389
Lastpage :
2392
Abstract :
Aluminum nitride, AlN, point group 6 mm has shown much potential as a high temperature piezoelectric material for both SAW devices and BAW devices. The ability to grow large single crystals has facilitated interest in the material for such applications. It was shown in this report that AIN can be used as a contact BAW transducer up to 600 C. The upper limit was set by coupling as opposed to element failure and it is anticipated that AIN can be used at temperatures substantially beyond this range.
Keywords :
aluminium compounds; bulk acoustic wave devices; high-temperature electronics; piezoelectric materials; piezoelectric transducers; ultrasonic transducers; AlN; BAW contact transducer; aluminum nitride single crystal; broadband transducer; high temperature piezoelectric material; Aluminum nitride; Conducting materials; Crystalline materials; Frequency; Piezoelectric devices; Piezoelectric materials; Piezoelectric transducers; Signal to noise ratio; Stress; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
ISSN :
1051-0117
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2007.601
Filename :
4410174
Link To Document :
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