Title :
1.3 μm InP/InGaAsP digital optical switches with extinction ratio of 30 dB
Author :
Choudhury, A. N M Masum ; Nelson, W.H. ; Abdalla, M. ; Rothman, M. ; Bryant, R. ; Niland, W. ; Powazinik, W.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
Abstract :
In this paper, we demonstrate record performance of a 0.5° angle InP/InGaAsP digital optical switch (DOS) at 1.3 μm wavelength. Extinction ratios of 30 dB at an injection current of 50 mA have been achieved, almost 10 dB higher than any previous report. We have also measured an extinction ratio of 20 dB at 30 mA, a reduction of more than 40% in injection current from our previous results. Propagation losses of these waveguides are also reported
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fabrication; optical losses; optical planar waveguides; optical switches; 1.3 mum; 30 dB; 30 mA; 50 mA; InP-InGaAsP; InP/InGaAsP digital optical switches; extinction ratio; injection current; integrated optics; propagation losses; Extinction ratio; Indium phosphide; Lasers and Electro-Optics Society; MOCVD; Optical buffering; Optical control; Optical polarization; Optical switches; Optical waveguides; Zinc;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379277
