Efficient optical modulation and bistability using the Franz-Keldysh effect in a thin film of GaAs

Author

Tayebati, Parviz ; Jauniskis, Linas

Author_Institution

Foster-Miller Inc., Waltham, MA, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

502

Lastpage

503

Abstract

In this paper, a simple high contrast optical modulator that uses the Franz-Keldysh (FK) effect in a thin film of H⁺ implanted GaAs integrated in an asymmetric Fabry-Perot (ASFP) device is reported. As we discuss, this approach might offer a simpler approach to high speed optical modulation and bistability. A schematic of the device structure, fabricated using standard photolithography and selective wet etching, is presented. The ASFP consists of a high reflectivity silver and a low reflectivity ITO mirror

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; high-speed optical techniques; optical bistability; optical films; Ag; Franz-Keldysh effect; GaAs:H; H⁺ implanted GaAs; ITO; ITO mirror; InSnO; asymmetric Fabry-Perot device; high speed optical modulation; optical bistability; photolithography; selective wet etching; silver mirror; thin film; Fabry-Perot; Gallium arsenide; High speed optical techniques; Integrated optics; Optical bistability; Optical devices; Optical films; Optical modulation; Reflectivity; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379281

Filename

379281