DocumentCode :
2482079
Title :
Efficient optical modulation and bistability using the Franz-Keldysh effect in a thin film of GaAs
Author :
Tayebati, Parviz ; Jauniskis, Linas
Author_Institution :
Foster-Miller Inc., Waltham, MA, USA
fYear :
1993
fDate :
15-18 Nov 1993
Firstpage :
502
Lastpage :
503
Abstract :
In this paper, a simple high contrast optical modulator that uses the Franz-Keldysh (FK) effect in a thin film of H+ implanted GaAs integrated in an asymmetric Fabry-Perot (ASFP) device is reported. As we discuss, this approach might offer a simpler approach to high speed optical modulation and bistability. A schematic of the device structure, fabricated using standard photolithography and selective wet etching, is presented. The ASFP consists of a high reflectivity silver and a low reflectivity ITO mirror
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; high-speed optical techniques; optical bistability; optical films; Ag; Franz-Keldysh effect; GaAs:H; H+ implanted GaAs; ITO; ITO mirror; InSnO; asymmetric Fabry-Perot device; high speed optical modulation; optical bistability; photolithography; selective wet etching; silver mirror; thin film; Fabry-Perot; Gallium arsenide; High speed optical techniques; Integrated optics; Optical bistability; Optical devices; Optical films; Optical modulation; Reflectivity; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
Type :
conf
DOI :
10.1109/LEOS.1993.379281
Filename :
379281
Link To Document :
بازگشت