Fast optical switching of dispersive bistable laser diodes in the injection-locked regime

Author

Hui, R. ; Paradisi, A. ; Benedetto, S. ; Montrosset, I.

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

fYear

1993

fDate

15-18 Nov 1993

Firstpage

518

Lastpage

519

Abstract

The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode

Keywords

carrier lifetime; distributed feedback lasers; laser mode locking; laser modes; optical bistability; optical dispersion; optical switches; semiconductor lasers; semiconductor switches; 1554 nm; DFB-BH laser diodes; OB switch-off; above threshold; carrier lifetime; dispersive bistable laser amplifier; dispersive bistable laser diodes; dynamic properties; effective carrier lifetime; fast optical switching; injection-locked regime; master-slave mode; optical bistability; optically injection-locked semiconductor lasers; slave laser; switch-off time; very near threshold; Charge carrier lifetime; Diode lasers; Dispersion; Laser modes; Master-slave; Optical amplifiers; Optical bistability; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379289

Filename

379289