Effect of quantum well number on nonlinear refraction in semiconductor laser amplifiers biased at transparency

Author

Davies, D.A.O. ; Fisher, M.A. ; Elton, D.J. ; Seltzer, C.P. ; Adams, M.J. ; Kennedy, G.T. ; Roberts, P. ; Grant, R.S. ; Sibbett, W.

Author_Institution

BT&D Technol. Ltd., Ipswich, UK

fYear

1993

fDate

15-18 Nov 1993

Firstpage

522

Lastpage

523

Abstract

To be able to exploit these effects in a device, and hence to be able to evaluate its performance, we wish to understand the implications of the choice of device construction on the size of nonlinearity as well as other parameters such as background loss which will limit its performance. We therefore present in this paper the results of experiments on a series of devices with various numbers of quantum wells as well as bulk active regions

Keywords

light refraction; nonlinear optics; optical communication equipment; optical losses; optical switches; quantum well lasers; semiconductor switches; background loss; bulk active regions; device construction; nonlinear refraction; nonlinearity; quantum well number; quantum wells; semiconductor laser amplifiers; transparency; Fiber nonlinear optics; Nonlinear optics; Optical pumping; Optical refraction; Optical variables control; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379291

Filename

379291