Subpicosecond response of GaAs Fabry-Perot microcavities

Author

Buhleier, R. ; Collet, Jacques Henri ; Bardinal, Veronique ; Fontaine, C. ; Legros, R.

Author_Institution

Lab. d´Anal. et d´Archit. des Syst., CNRS, Toulouse

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

321

Lastpage

324

Abstract

The temporal and spectral response of bulk GaAs Fabry-Perot microcavities have been investigated in the subpicosecond regime at room temperature. Time resolved reflectivity measurements show a strong reshaping of a Gaussian fs-pulse after reflection from a microcavity caused by group velocity dispersion. The pulse distortion agrees fairly well with model calculations using Fourier transform analysis. Time integrated degenerate four-wave mixing experiments show that response times of the cavity as short as 300 fs were achieved

Keywords

Fabry-Perot resonators; Fourier transform spectra; III-V semiconductors; gallium arsenide; high-speed optical techniques; laser cavity resonators; multiwave mixing; optical dispersion; reflectivity; time resolved spectra; 300 fs; Fourier transform analysis; GaAs; GaAs Fabry-Perot microcavities; Gaussian fs-pulse; bulk GaAs Fabry-Perot microcavities; group velocity dispersion; microcavity; pulse distortion; reflection; response times; room temperature; spectral response; subpicosecond regime; subpicosecond response; temporal response; time integrated degenerate four-wave mixing; time resolved reflectivity; Dispersion; Distortion measurement; Fabry-Perot; Gallium arsenide; Microcavities; Reflection; Reflectivity; Temperature; Time measurement; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571110

Filename

571110