Title :
Effects of implant annealing on the power conversion efficiency of vertical cavity top-surface emitting lasers
Author :
Lear, K.L. ; Chalmers, S.A. ; Kilcoyne, S.P.
Author_Institution :
Photonics Res. Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Annealing of implant damage in proton implant isolated, top-emitting VCSELs at temperatures up to 400 °C has been shown to improve power conversion efficiency through threshold current reduction. Additionally, lower temperature (300 °C) annealing substantially reduces the series resistance of some device geometries, specifically for larger devices without overlapping contacts
Keywords :
annealing; ion implantation; isolation technology; proton effects; surface emitting lasers; 300 C; 400 C; annealing; implant damage; power conversion efficiency; proton implant isolation; series resistance; threshold current; top-emitting VCSELs; vertical cavity top-surface emitting lasers; Annealing; Implants; Laser modes; Mirrors; Power conversion; Protons; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379304
