Title :
Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field
Author :
Gratiet, L. Le ; Bedel, E. ; Grac, R. ; Fontaine, C. ; Pugnet, M.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
fDate :
29 Apr-3 May 1996
Abstract :
In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 μJ/ cm2
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; electro-optical modulation; gallium arsenide; high-speed optical techniques; light diffraction; semiconductor quantum wells; semiconductor superlattices; GaAlAs-GaAs; GaAs/GaAlAs multiple quantum wells; carrier lifetime; diffraction efficiencies; electric field; electric field screening; epitaxial lift-off; high excitation energies; picosecond regime; pulse energy; static electric field; subnanosecond multiple quantum well modulators; subnanosecond optical deflection; transient gratings; transmission deflectors; ultrafast transmission modulators; van der Waals bonded GaAlAs-GaAs MQW; Bonding; Contacts; Density estimation robust algorithm; Electrodes; Gallium arsenide; Optical arrays; Pollution measurement; Quantum well devices; Substrates; Writing;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571112
