Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field

Author

Gratiet, L. Le ; Bedel, E. ; Grac, R. ; Fontaine, C. ; Pugnet, M.

Author_Institution

Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

329

Lastpage

332

Abstract

In this communication, we present preliminary results obtained on subnanosecond multiple quantum well modulators, as a step towards designing transmission deflectors. Fabrication of ultrafast transmission modulators based on GaAs/GaAlAs multiple quantum wells has been achieved by means of epitaxial lift-off. Transient grating experiments performed at high excitation energies showed diffraction efficiencies larger than 1%. The effect of a static electric field was investigated. Electric field screening has been evidenced in the picosecond regime at a pulse energy of 20 μJ/ cm²

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; electro-optical modulation; gallium arsenide; high-speed optical techniques; light diffraction; semiconductor quantum wells; semiconductor superlattices; GaAlAs-GaAs; GaAs/GaAlAs multiple quantum wells; carrier lifetime; diffraction efficiencies; electric field; electric field screening; epitaxial lift-off; high excitation energies; picosecond regime; pulse energy; static electric field; subnanosecond multiple quantum well modulators; subnanosecond optical deflection; transient gratings; transmission deflectors; ultrafast transmission modulators; van der Waals bonded GaAlAs-GaAs MQW; Bonding; Contacts; Density estimation robust algorithm; Electrodes; Gallium arsenide; Optical arrays; Pollution measurement; Quantum well devices; Substrates; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571112

Filename

571112