Title :
α-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers
Author :
Schönfelder, A. ; Weisser, S. ; Ralston, J.D. ; Rosenzweig, J.
Author_Institution :
Inst. fur Hochfrequenstech. und Quanterelekronik, Karlsruhe Univ., Germany
Abstract :
We have previously demonstrated that the combination of strain and p-doping leads to substantial performance enhancements in the high-speed modulation characteristics of GaAs-based MQW lasers. Here, we investigate for the first time, both theoretically and experimentally, the improvements in the linewidth enhancement factor, α, resulting from the simultaneous addition of strain and p-doping in GaAs-based MQW lasers
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; optical modulation; quantum well lasers; refractive index; α-factor improvements; GaAs-based MQW lasers; In0.35Ga0.5As-GaAs; In0.35Ga0.65As/GaAs; MQW lasers; high-speed modulation characteristics; linewidth enhancement factor; p-doping; performance enhancements; strain; Charge carrier density; Gallium arsenide; Indium gallium arsenide; Quantum well devices; Refractive index;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379318
