• DocumentCode
    2482807
  • Title

    α-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers

  • Author

    Schönfelder, A. ; Weisser, S. ; Ralston, J.D. ; Rosenzweig, J.

  • Author_Institution
    Inst. fur Hochfrequenstech. und Quanterelekronik, Karlsruhe Univ., Germany
  • fYear
    1993
  • fDate
    15-18 Nov 1993
  • Firstpage
    574
  • Lastpage
    575
  • Abstract
    We have previously demonstrated that the combination of strain and p-doping leads to substantial performance enhancements in the high-speed modulation characteristics of GaAs-based MQW lasers. Here, we investigate for the first time, both theoretically and experimentally, the improvements in the linewidth enhancement factor, α, resulting from the simultaneous addition of strain and p-doping in GaAs-based MQW lasers
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; optical modulation; quantum well lasers; refractive index; α-factor improvements; GaAs-based MQW lasers; In0.35Ga0.5As-GaAs; In0.35Ga0.65As/GaAs; MQW lasers; high-speed modulation characteristics; linewidth enhancement factor; p-doping; performance enhancements; strain; Charge carrier density; Gallium arsenide; Indium gallium arsenide; Quantum well devices; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-1263-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1993.379318
  • Filename
    379318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2482807