Title :
Damping effects in InGaAs/InP MQW Fabry-Perot lasers: the role of the threshold carrier density
Author :
McDonald, David ; O´Dowd, Ronan F.
Author_Institution :
Dept. of Electron. Eng., Univ. Coll. Dublin, Ireland
Abstract :
In the present work the differential gain values for four Fabry-Perot (FP) InGaAs quantum well lasers of different lengths from the same wafer have been measured from their parasitic free relative intensity noise (RIN) spectra. Using the single mode rate equations, with Langevin noise sources, the measured RIN has been curve fitted in order to extract pertinent parameters related to the dynamic characteristic of the structure. By isolating the dependence of these parameters as a function of cavity length, a variation of the effective gain compression parameter with threshold gain is observed
Keywords :
Fabry-Perot resonators; III-V semiconductors; carrier density; damping; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser noise; quantum well lasers; Fabry-Perot InGaAsP quantum well lasers; InGaAs-InP; InGaAs/InP MQW Fabry-Perot lasers; Langevin noise source; cavity length; damping effects; differential gain values; dynamic characteristic; effective gain compression parameter; parasitic free relative intensity noise; relative intensity noise spectra; single mode rate equations; threshold carrier density; threshold gain; Damping; Fabry-Perot; Gain measurement; Indium gallium arsenide; Indium phosphide; Laser modes; Laser noise; Noise measurement; Quantum well devices; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379321
