Title :
Tapered semiconductor optical power amplifiers and oscillators
Author :
Walpole, James N.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Summary form only given. Tapered AlGaAs quantum well (QW) semiconductor optical amplifiers have made possible compact, efficient, all semiconductor cw optical sources with high brightness. At 980 nm wavelength, cw output power over 3 W in a nearly single-lobed, nearly diffraction-limited beam has been demonstrated in a master-oscillator/power-amplifier configuration requiring less than 100 mW of amplifier input power
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; laser beams; quantum well lasers; 100 mW; 3 mW; 980 nm; AlGaAs; AlGaAs quantum well amplifiers; amplifier input power; compact efficient all semiconductor cw optical sources; cw output power; high brightness; master-oscillator/power-amplifier configuration; nearly diffraction-limited beam; nearly single-lobed; semiconductor optical power oscillators; tapered semiconductor optical power amplifiers; Optical amplifiers; Optical beams; Optical diffraction; Optical feedback; Optical pumping; Oscillators; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379323
