Title :
High power broad area diode amplifiers
Author :
Goldberg, Lew ; Mehuys, D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
To determine wavefront distortion due to material nonuniformity, the semiconductor optical amplifier output phasefront was interferometrically measured. An overall total random phasefront distortion of <Λ/25 was measured in a 1.0 mm long GaAlAs amplifier. Phasefront distortion due to temperature nonuniformities and carrier lensing due to lateral gain variation was also characterized
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; laser variables measurement; light interferometry; optical pumping; ring lasers; semiconductor lasers; 1 mm; GaAlAs; GaAlAs amplifier; carrier lensing; high power broad area diode amplifiers; interferometrically measured; lateral gain variation; material nonuniformity; overall total random phasefront distortion; semiconductor optical amplifier output phasefront; temperature nonuniformities; wavefront distortion; Distortion measurement; High power amplifiers; Optical amplifiers; Optical distortion; Optical materials; Phase distortion; Phase measurement; Semiconductor diodes; Semiconductor materials; Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379324
