DocumentCode
2482958
Title
35-dB small-signal-gain high-power diffraction-limited tapered semiconductor amplifier
Author
Ych, Ping-Hui S. ; Wu, I-Fan ; Jiang, Shijun ; Dagenais, Mario
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
588
Lastpage
589
Abstract
Summary form only given. GaAs-AlGaAs GRINSCH single quantum well tapered semiconductor optical amplifier characterisation and fabrication. We demonstrated 6 mW of coupled input power, and more than 4.5 W of pulsed output power
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical fabrication; quantum well lasers; 35 dB; 4.5 W; 6 mW; GaAs-AlGaAs; GaAs-AlGaAs GRINSCH single quantum well tapered semiconductor optical amplifier; coupled input power; high-power diffraction-limited tapered semiconductor amplifier; laser fabrication; pulsed output power; small-signal-gain; Diffraction; High power amplifiers; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379325
Filename
379325
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