Title :
High-power, diffraction-limited, external-cavity tunable diode lasers
Author :
Mehuys, D. ; Welch, D.F. ; Scifres, D.R.
Author_Institution :
SCL Inc., San Jose, CA, USA
Abstract :
In summary, a novel external-cavity tunable semiconductor quantum well laser is demonstrated. Diffraction-limited output powers up to 1.0 W CW have been achieved, and a tuning bandwidth of 200 nm has been accessed by interchanging gain elements within a common external cavity
Keywords :
laser cavity resonators; laser tuning; light diffraction; semiconductor lasers; 1 W; AlGaAs; GaAs; InGaAs; common external cavity; diffraction-limited output powers; external-cavity tunable semiconductor quantum well laser; gain elements; high-power diffraction-limited external-cavity tunable diode lasers; tuning bandwidth; Bandwidth; Diffraction; Diode lasers; Gratings; Laser tuning; Lasers and electrooptics; Power generation; Pump lasers; Semiconductor lasers; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379330
