DocumentCode
2483100
Title
InAlGaAs/GaAs strained-layer superluminescent diodes
Author
Murison, R. ; Moore, A. ; Henderson, R. ; Holehouse, H.
Author_Institution
EG&G Optoelectron., Quebec, Que., Canada
fYear
1993
fDate
15-18 Nov 1993
Firstpage
602
Abstract
Summary form only given. We describe a high performance InAlGaAs/GaAs superluminescent diode operating in the 830 nm wavelength window, exhibiting spectral modulation below 1% at powers up to and exceeding 50 mW, with good coupling efficiency into polarisation maintaining (PMF) fiber, and high reliability. A longitudinal spatial hole burning model is used to describe device performance
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical hole burning; optical modulation; semiconductor device models; semiconductor device reliability; superluminescent diodes; superradiance; 50 mW; 830 nm; 830 nm wavelength window; InAlGaAs-GaAs; InAlGaAs/GaAs strained-layer superluminescent diodes; PMF fiber; device performance; good coupling efficiency; high performance; high reliability; longitudinal spatial hole burning model; spectral modulation; Gallium arsenide; Superluminescent diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379332
Filename
379332
Link To Document