DocumentCode
2483155
Title
InGaAlP visible semiconductor lasers
Author
Hatakoshi, G. ; Itaya, K.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1993
fDate
15-18 Nov 1993
Firstpage
607
Lastpage
608
Abstract
InGaAlP visible semiconductor lasers are of major interest as practical short-wavelength light sources for use in high-performance optical processing systems. The development of InGaAlP lasers has progressed towards the realization of highly reliable high-power and short-wavelength lasers. This paper reviews the recent achievements in InGaAlP laser research
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light sources; optical information processing; semiconductor device reliability; semiconductor lasers; InGaAlP; InGaAlP laser research; InGaAlP visible semiconductor lasers; high-performance optical processing systems; highly reliable high-power short-wavelength lasers; reviews; short-wavelength light sources; Electrons; Gallium arsenide; Laser stability; Light sources; Photonic band gap; Power generation; Research and development; Semiconductor lasers; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379335
Filename
379335
Link To Document