DocumentCode
2483198
Title
Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes
Author
Huang, K.F. ; Tai, K. ; Wu, C.C. ; Wynn, J.D.
Author_Institution
Dept. of Electro-Phys., Chiao Tung Univ., Hsinchu, Taiwan
fYear
1993
fDate
15-18 Nov 1993
Firstpage
613
Lastpage
614
Abstract
Recently electrical injected visible vertical surface emitting lasers (VCSELs) have been reported with a pulsed threshold current of about 30 mA. In this paper we report for the first time the continuous wave (cw) operation of such visible DBR InGaP-InGaAlP QW VCSEL diodes
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 30 mA; DBR InGaP-InGaAlP QW VCSEL diodes; InGaP-InGaAlP; continuous wave visible quantum well surface emitting laser diodes; cw operation; electrical injected; pulsed threshold current; visible vertical surface emitting lasers; Diode lasers; Distributed Bragg reflectors; Lasers and electrooptics; Optical pulses; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379338
Filename
379338
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