DocumentCode
2483226
Title
Dependency of growth of Arabidopsis thaliana on intensity of D.C. electric field
Author
Okumura, Takamasa ; Muramoto, Yuji ; Shimizu, Noriyuki
Author_Institution
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
fYear
2012
fDate
14-17 Oct. 2012
Firstpage
255
Lastpage
258
Abstract
We have studied the influence of electric field on plant growth. In previous papers, we reported that the D.C. electric field increases the seed germination rate, weight and length of daikon radish. We also obtain the similar effects for thale cress. It is reasonable to expect that there is an optimum intensity of D.C. electric field for plant growth improvement. As the first step to seek out the optimum intensity, the seeds of thale cress were cultivated under three circumstances; 0.0kV/m, 2.5kV/m, and 10.0kV/m of D.C. field. As a result, the growth is most increased by the 10.0kV/m; therefore, we estimated the optimum intensity to be higher than 2.5kV/m. In this paper, the detailed dependency of the growth of thale cress on the intensity of the D.C. electric field is studied.
Keywords
biological effects of fields; botany; DC electric field; arabidopsis thaliana growth; daikon radish length; daikon radish weight; plant growth improvement; seed germination rate; Acceleration; Corona; Discharges (electric); Electric fields; Electrodes; Electrostatics; Plasmas;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena (CEIDP), 2012 Annual Report Conference on
Conference_Location
Montreal, QC
ISSN
0084-9162
Print_ISBN
978-1-4673-1253-0
Electronic_ISBN
0084-9162
Type
conf
DOI
10.1109/CEIDP.2012.6378769
Filename
6378769
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