Title :
Self-aligned single-lateral-mode waveguide diode ring lasers
Author :
Liang, James J. ; Ballantyne, Joseph M.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The majority of semiconductor ring lasers reported to date, have been formed by etching the waveguide through the entire active region, which results in multi-lateral mode operation. In order to make single-lateral-mode ring lasers with etched facets, the waveguide and the facet have to be etched separately, with the facet deep etched, but the waveguide shallow etched
Keywords :
etching; laser modes; optical fabrication; quantum well lasers; ring lasers; waveguide lasers; deep etched facet; entire active region; etched facets; multi-lateral mode operation; self-aligned single-lateral-mode waveguide diode ring lasers; semiconductor ring lasers; shallow etched waveguide; single-lateral-mode ring lasers; waveguide etching; waveguide laser fabrication; Chemical lasers; Diodes; Etching; Laser modes; Lithography; Optical waveguides; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379342
