Title :
200 μA-threshold quantum wire lasers
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A number of attributes predicted for quantum wire lasers have been demonstrated using GaAs wells on periodically corrugated substrates. Here, We report ultra-low threshold currents and other operational characteristics of strained multi-well quantum-wire lasers that employ simple and unique self-alignment during growth
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor quantum wires; substrates; 200 muA; GaAs; GaAs wells; operational characteristics; periodically corrugated substrates; quantum wire lasers; self-alignment; strained multi-well quantum-wire lasers; ultra-low threshold currents; Bandwidth; Gallium arsenide; Indium phosphide; Optical pulses; Power generation; Quantum well lasers; Substrates; Tensile strain; Threshold current; Wire;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379345
