Title :
Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers
Author :
Ralston, J.D. ; Weisser, S. ; Schönfelder, A. ; Esquivias, I. ; Larkins, E.C. ; Rosenzweig, J. ; Tasker, P.J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
A great deal of effort has been devoted to simplifying the monolithic integration, and enhancing the high-speed modulation characteristics, of GaAs-based SQW lasers. MBE-grown, vertically-compact, high-speed GaAs/AlGaAs separate-confinement double heterostructure (SCDH) devices have been developed
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; optical fabrication; optical modulation; quantum well lasers; semiconductor growth; GaAs; GaAs-based SQW lasers; GaAs-based high-speed semiconductor lasers; MBE-grown; high-speed GaAs/AlGaAs separate-confinement double heterostructure devices; high-speed modulation characteristics; monolithic integration; optoelectronic integration; vertically-compact; Availability; Bandwidth; Gallium arsenide; Integrated circuit technology; Monolithic integrated circuits; Optical device fabrication; Quantum well devices; Quantum well lasers; Semiconductor lasers; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379350
