MBE growth of II-VI blue semiconductor lasers

Summary form only given. In August of 1992 Sony reported the use of the quaternary (Zn,Mg)(S,Se) in a six quantum well diode laser and operating pulsed at 77K. A reduced emission wavelength resulted from the increased bandgap energy of the quaternary. The Sony results suggested the opportunity for maintaining lattice compatibility to GaAs while providing an increased bandgap for the implementation of separate confinement heterostructure (SCH) QW lasers. Such structures would have optical waveguiding provided by the Zn(S,Se) layers when bounded by the lower index quaternary cladding layers. The authors describe their efforts to employ the quaternary to realize the pseudomorphic SCH diode configurations. Although the device performance evolves continually as new configurations are tried, at the time of writing the devices have been operated at room temperature under pulsed conditions for periods exceeding 1/2 hour before failure, and have reached a 20% duty cycle at room temperature before thermal failure