Temperature dependence of the threshold current density of CdZnSe blue-green quantum well diode lasers

Author

Park, Y.S. ; Zory, P.S.

Author_Institution

Photonics Res. Lab., Florida Univ., Gainesville, FL, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

648

Lastpage

649

Abstract

Recently, there have been reports that the optical gain in CdZnSe QW lasers is not derived from stimulated processes between free electrons and holes but between bound electron and holes or excitons. If so, then an "excitonic gain" (EX) model rather than the electron-hole plasma (EHP) model would be appropriate for designing CdZnSe QW lasers. While this may be the case, it is interesting at this time to see how well the EHP model can do in predicting the temperature dependence of threshold current density for such lasers. The laser structure studied has an Cd_0.2Zn_0.8Se single quantum well (65Å) active layer

Keywords

II-VI semiconductors; cadmium compounds; current density; laser beams; laser variables measurement; quantum well lasers; solid-state plasma; zinc compounds; Cd_0.2Zn_0.8Se; Cd_0.2Zn_0.8Se single quantum well; CdZnSe; QW lasers; blue-green quantum well diode lasers; bound electrons; bound holes; electron-hole plasma model; excitonic gain model; excitons; free electrons; holes; laser structure; optical gain; stimulated processes; temperature dependence; threshold current density; Charge carrier processes; Electron optics; Excitons; Free electron lasers; Laser modes; Plasma density; Quantum well lasers; Stimulated emission; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379356

Filename

379356