DocumentCode
2483585
Title
CdZnSe ohmic contacts for II-VI based blue-green emitters
Author
Healy, P.D. ; Ayers, J.E.
Author_Institution
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
650
Lastpage
651
Abstract
Reports on the fabrication, current-voltage characteristics and compositional profiles for the CdZnSe graded bandgap ohmic contacts for both n-ZnSe and p-ZnSe. This basic technology can be adapted for use in laser diode structures, thus allowing continuous operation of blue-green lasers at higher temperatures than presently achieved. It is also expected that improved ohmic contacts improve the lifetime of blue-green laser devices
Keywords
II-VI semiconductors; cadmium compounds; laser beams; laser variables measurement; ohmic contacts; optical fabrication; semiconductor lasers; zinc compounds; CdZnSe; II-VI based blue-green emitters; ZnSe; blue-green lasers; compositional profiles; continuous operation; current-voltage characteristics; fabrication; graded bandgap ohmic contacts; laser diode structures; lifetime; n-ZnSe; p-ZnSe; Contact resistance; Diode lasers; Ohmic contacts; Optical pulses; Photonic band gap; Pulse measurements; Semiconductor lasers; Surface emitting lasers; Temperature; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379357
Filename
379357
Link To Document