Title :
Crystal growth and properties of column-III nitrides for short wavelength light emitters
Author :
Akasaki, I. ; Amano, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
Abstract :
Summary form only. Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their alloys AlGaInN, the so called column-III nitrides are promising candidates as the material for fabrication of very short wavelength light emitters in the blue to near ultraviolet region, because they have direct transition type band structure with the bandgap energy ranging from 1.9 eV to 6.2 eV at room temperature (RT)
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor growth; vapour phase epitaxial growth; 1.9 to 6.2 eV; AlGaIn; AlGaInN; AlN; GaN; InN; aluminum nitride; bandgap energy; column-III nitrides; crystal growth; direct transition type band structure; fabrication; gallium nitride; indium nitride; near ultraviolet region; room temperature; short wavelength light emitters; very short wavelength light emitters; Aluminum alloys; Aluminum gallium nitride; Aluminum nitride; Crystalline materials; Fabrication; Gallium alloys; Gallium nitride; III-V semiconductor materials; Indium; Light emitting diodes;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379358
