High-speed III-V asymmetric Fabry-Perot modulators

Author

Barron, Carole Craig ; Mahon, C.J. ; Thibeault, B.J. ; Wang, C. ; Karin, J.R. ; Coldren, L.A. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

658

Lastpage

659

Abstract

High-speed asymmetric Fabry-Perot modulators (AFPMs) could make extremely high-aggregate-bandwidth photonic switching systems a reality. Here I review our work on the design, fabrication, and mm-wave electrical and optical characterization of AFPMs with >35-GHz frequency response

Keywords

Fabry-Perot resonators; III-V semiconductors; electro-optical switches; frequency response; optical losses; photonic switching systems; semiconductor quantum wells; 35 GHz; III-V asymmetric Fabry-Perot modulators; electro optical modulation; frequency response; high-aggregate-bandwidth photonic switching systems; high-speed asymmetric Fabry-Perot modulators; mm-wave electrical characterization; optical characterization; quantum well devices; smart pixels; Bandwidth; Fabry-Perot; Frequency response; High speed optical techniques; III-V semiconductor materials; Optical modulation; Optical receivers; Optical saturation; Switching systems; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379361

Filename

379361