Title :
Epitaxial liftoff of GaAs detectors onto silicon integrated circuits
Author :
Jokerst, Nan Marie
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The seperation of thin film epitaxial devices from the growth substrated is called epitaxial lift off, and the subsequent transfer and bonding of these thin film devices to smooth substrates such as Si integrated circuits is studied
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical fabrication; photodetectors; semiconductor growth; thin film circuits; thin film devices; GaAs; GaAs detectors; Si; Si integrated circuits; bonding; epitaxial lift off; silicon integrated circuits; smooth substrates; thin film devices; thin film epitaxial devices; Bonding; Costs; Detectors; Gallium arsenide; Integrated circuit interconnections; Semiconductor thin films; Silicon; Substrates; Thin film circuits; Thin film devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379364
