Title :
Influence of the compensation in semi-insulating GaAs on the particle detector performance
Author :
Rogalla, M. ; Chen, J.W. ; Geppert, R. ; Göppert, R. ; Kienzle, M. ; Irsigler, R. ; Ludwig, J. ; Runge, K. ; Ebling, D.G. ; Schmid, Th. ; Liu, X. ; Krüger, J. ; Weber, E.R.
Author_Institution :
Fakultat fur Phys., Albert-Ludwigs-Univ., Freiburg, Germany
fDate :
29 Apr-3 May 1996
Abstract :
GaAs Schottky diodes made by commercial undoped semi-insulating (SI) material have been shown to work well as radiation detectors. This material offers high radiation resistance together with high charge carrier mobility, good signal-to-noise ratio and a good detection efficiency for minimum ionizing particles. To optimise the detector performance of Schottky diodes made on SI-GaAs, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied. A strong dependence of the CCE on the ionized state of the arsenic antisite defect AsGa+ and the resistivity determined from the Norde plot was observed. Also the influence of the compensation on the Schottky barrier height and space charge density can been seen
Keywords :
III-V semiconductors; Schottky diodes; X-ray detection; alpha-particle detection; carrier mobility; gallium arsenide; leakage currents; point defects; semiconductor counters; space charge; GaAs; Norde plot; Schottky barrier height; Schottky diodes; alpha particles; arsenic antisite defect; carrier mobility; charge collection efficiency; compensation; detection efficiency; particle detector; radiation detectors; radiation resistance; resistivity; semi-insulating GaAs; signal-to-noise ratio; space charge density; space charge region; Alpha particles; Charge carrier mobility; Conductivity; Gallium arsenide; Ionizing radiation; Radiation detectors; Schottky barriers; Schottky diodes; Signal to noise ratio; Space charge;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571119
