Title :
Trap influence on the performance of gallium arsenide radiation detectors
Author :
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Canali, C. ; Papa, C. del ; Nava, F.
Author_Institution :
Dept. of Phys., Bologna Univ., Italy
fDate :
29 Apr-3 May 1996
Abstract :
Ohmic contacts play an important role in the performance of LEC gallium arsenide particle detectors since they possibly control the injection of charge carriers. Contact characteristics have been compared and related to electrically active defects induced during contact preparation and to the detector efficiency. The electric field distribution has also been analyzed. Spectroscopic investigations have put into evidence that the contact fabrication process significantly influences the trap density whilst it does not change their signatures
Keywords :
III-V semiconductors; alpha-particle detection; alpha-particle spectrometers; deep levels; electron traps; gallium arsenide; ohmic contacts; GaAs; LEC GaAs; carrier injection; detector efficiency; electric field distribution; electrically active defects; ohmic contacts; particle detectors; radiation detectors; trap density; Charge carrier processes; Charge carriers; Electron traps; Gallium arsenide; Metallization; Ohmic contacts; Physics; Radiation detectors; Spectroscopy; Transient analysis;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571120
