DocumentCode
2484723
Title
Growth of multilayered epitaxial films by pulsed excimer laser ablation
Author
Lowndes, Douglas H.
Author_Institution
Div. of Solid State, Oak Ridge Nat. Lab., TN, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
770
Lastpage
771
Abstract
The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described
Keywords
pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; composition; epitaxial film growth; heteroepitaxial multilayers; metastable phases; pulsed excimer laser ablation; semiconductor alloys; Laser ablation; Laser beams; Optical pulses; Plasma density; Plasma materials processing; Plasma temperature; Programmable logic arrays; Pulsed laser deposition; Semiconductor lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379419
Filename
379419
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