Title :
Overshoot dynamics in GaAs observed using THz radiation
Author :
Norris, Theodore B. ; Son, J.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given. THz electromagnetic radiation emitted by accelerating electrons is used as to probe the transport dynamics of carriers in semiconductor devices. Velocity overshoot is directly observed in GaAs up to extremely high fields (200 kV/cm)
Keywords :
III-V semiconductors; gallium arsenide; high field effects; GaAs; THz electromagnetic radiation emission; accelerating electrons; carrier transport dynamics; high fields; semiconductor device; velocity overshoot; Electron emission; Gallium arsenide; Probes; Semiconductor devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379440
