DocumentCode
2485165
Title
Ultrafast quantum well optoelectronics
Author
Knox, W.H.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
814
Abstract
Summary form only given. Quantum wells exhibit ultrafast optoelectronic response (~150 fs or less), low dispersion propagation, and provide spatio-temporal internal field mapping. We review experiments illustrating these points, and discuss developments in high speed quantum well optoelectronic devices
Keywords
electroabsorption; excitons; high-speed optical techniques; optical dispersion; optoelectronic devices; semiconductor quantum wells; 150 fs; high speed quantum well optoelectronic devices; low dispersion propagation; review; spatio-temporal internal field mapping; ultrafast optoelectronic response; ultrafast quantum well optoelectronics; Absorption; Dielectric thin films; Etching; Optical arrays; Optical devices; Optical propagation; Optoelectronic devices; Temperature; Ultrafast electronics; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379443
Filename
379443
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