Title :
Picosecond measurement of carrier sweepout times in InGaAs quantum wells
Author :
Froberg, N.M. ; Johnson, A.M. ; Goossen, K.W. ; Cunningham, J.E. ; Santos, M.B. ; Jan, W.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Recently, quantum well electroabsorption modulators have been proposed for use as optoelectronic switches in information processing systems. Recently, a strain-balanced InGaAs/GaAsP system has been shown to have good surface morphology and a surprisingly high saturation intensity. The most likely reason for this favorable result is a high sweepout rate of the carriers from the wells. To investigate the physics of carrier escape in this system, we have recently performed pump-probe transmission measurements with picosecond resolution on biased InGaAs quantum well structures
Keywords :
III-V semiconductors; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; semiconductor quantum wells; InGaAs quantum well structures; InGaAs quantum wells; InGaAs-GaAsP; carrier escape; carrier sweepout times; fiber-grating technique; good surface morphology; harmonically mode-locked Nd:YAG laser; high saturation intensity; high sweepout rate; information processing systems; laser pulse compression; optoelectronic switches; picosecond measurement; picosecond resolution; pump-probe transmission measurements; quantum well electroabsorption modulators; strain-balanced InGaAs/GaAsP system; time-resolved transmission measurements; Computer aided analysis; Excitons; Gallium arsenide; Indium gallium arsenide; Information processing; Laser excitation; Power lasers; Quantum well lasers; Switches; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379444
