DocumentCode :
2486079
Title :
Improvement of simultaneous switching noise simulation considering on-chip capacitance
Author :
Ota, Kunio ; Matsuge, Kazuhisa ; Takahashi, Yo ; Sudo, Toshio
Author_Institution :
Corp. Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fYear :
2010
fDate :
25-30 July 2010
Firstpage :
284
Lastpage :
288
Abstract :
Simultaneous switching noise (SSN) causes signal degradation to the high-speed interfaces among CMOS VLSIs. To achieve SSN simulation with a high accuracy, accurate models for chips, packages and printed circuit boards (PCBs) are required. However, such accurate simulation models are not currently available, since chip vendors do not release the value of on-chip capacitance and the detailed package model with mutual inductances. This paper presents our approach for establishing an accurate model without detailed information on the chip and package. The three key points of our approach are the measurement of on-chip capacitance using a vector network analyzer (VNA), the measurement of quad flat package (QFP) dimensions using X-ray photographs, and the application of 3-D electromagnetic field solver to extract a detailed equivalent circuit model for the package from a geometrical structure. The simulated SSN time-domain waveforms showed an extremely good agreement with the measured results.
Keywords :
CMOS integrated circuits; VLSI; equivalent circuits; integrated circuit modelling; integrated circuit noise; integrated circuit packaging; network analysers; printed circuits; 3D electromagnetic field solver; CMOS VLSI; X-ray photographs; equivalent circuit model; mutual inductances; on-chip capacitance; printed circuit boards; quad flat package; signal degradation; simultaneous switching noise simulation; vector network analyzer; Capacitance; Capacitance measurement; Current measurement; Electronics packaging; Integrated circuit modeling; System-on-a-chip; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (EMC), 2010 IEEE International Symposium on
Conference_Location :
Fort Lauderdale, FL
ISSN :
2158-110X
Print_ISBN :
978-1-4244-6305-3
Type :
conf
DOI :
10.1109/ISEMC.2010.5711286
Filename :
5711286
Link To Document :
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