Title :
The design of the low noise GaAs MMICs broadband amplifiers
Author_Institution :
Inst. of Electron. Fundamentals, Warsaw, Poland
Abstract :
The paper presents an approach to the problem of low-noise broadband MMIC amplifiers in the low GHz frequency ranges implemented at the Institute of Electronics Fundamentals. The performance of the well know resistive feedback amplifier is compared to the novel structure with capacitive lossless feedback. The new circuit has one of the best noise properties ever reported in the decade bandwidth
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; feedback amplifiers; gallium arsenide; integrated circuit design; integrated circuit noise; wideband amplifiers; 0.25 to 10 GHz; 1.4 dB; 26 dB; 3.1 GHz; GaAs; GaAs MMIC amplifiers; PHEMT process; capacitive lossless feedback; decade bandwidth; low noise broadband amplifiers; noise properties; Broadband amplifiers; Circuit noise; Feedback circuits; Gallium arsenide; Impedance matching; Low-frequency noise; MMICs; Noise figure; Noise measurement; Resistors;
Conference_Titel :
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location :
Krakow
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.740825
