Title :
Measurement of millimeter wave transistor parameters
Author_Institution :
Kiev Polytech. Inst., Ukraine
Abstract :
This paper presents our investigations on a problem concerning measurement of parameters of millimeter wave field-effect transistors mounted on a lateral side of H-waveguide ridges. The necessary measurement procedures and calculation techniques are described. The extension of the method to optimum noise parameters is proposed.
Keywords :
electric impedance measurement; electric noise measurement; millimetre wave field effect transistors; millimetre wave measurement; rectangular waveguides; semiconductor device testing; H-waveguide ridges; field-effect transistors; lateral side; millimeter wave transistor parameters; optimum noise parameters; FETs; Impedance; Integrated circuit measurements; Integrated circuit noise; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Rectangular waveguides; Transmission line measurements; Transmission lines;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547367
