DocumentCode
2486413
Title
Measurement of millimeter wave transistor parameters
Author
Chenakin, A.V.
Author_Institution
Kiev Polytech. Inst., Ukraine
fYear
1996
fDate
17-21 June 1996
Firstpage
596
Lastpage
597
Abstract
This paper presents our investigations on a problem concerning measurement of parameters of millimeter wave field-effect transistors mounted on a lateral side of H-waveguide ridges. The necessary measurement procedures and calculation techniques are described. The extension of the method to optimum noise parameters is proposed.
Keywords
electric impedance measurement; electric noise measurement; millimetre wave field effect transistors; millimetre wave measurement; rectangular waveguides; semiconductor device testing; H-waveguide ridges; field-effect transistors; lateral side; millimeter wave transistor parameters; optimum noise parameters; FETs; Impedance; Integrated circuit measurements; Integrated circuit noise; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Rectangular waveguides; Transmission line measurements; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location
Braunschweig, Germany
Print_ISBN
0-7803-3376-4
Type
conf
DOI
10.1109/CPEM.1996.547367
Filename
547367
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